Massachusetts Institute of Technology (MIT) found a way to combine the two in one design 2D-material with different properties of electron transport – metal graphene and semiconducting transition metal dichalcogenides, disulfid molybdenum writes gadget news blog
This was reported by the publication in the journal Nano Letters. The authors have started to address this problem by growing samples of graphene and MoS2 by chemical vapor deposition in a vacuum. In disulfide modibdena excised transistor channels, and it was applied on top of the protective layer of aluminum oxide (Al2O3). Then imposed a graphene plane and cut it with oxygen plasma to form contact electrodes and the connecting conductor tracks.
The researchers hope that their proposed method can be applied for combining many types of 2D-materials and create an entirely new – thin, transparent and flexible – types of devices: lasers, tunnel diodes, transistors, etc.
In the future they intend to improve its technology, adding the ability to integrate layers of 2D-insulating materials, such as boron nitride.